Method for forming TiSiN thin film layer by using atomic layer deposition
US9159608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Apr 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9×10−3 Torr or less, Si containing gas: 1×10−3˜3×10−1 Torr and N containing gas: 7×10−3˜6×10−1 Torr, and a pr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.