Dividing method for wafer
US9159622B2 · kind B2 · utility
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6References
2Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 7, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.