Fin field-effect transistor (FinFET) device formed using a single spacer, double hardmask scheme

US9159630B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andy Wei · Queensbury, US
• Dae Geun Yang · Watervliet, US
• Dae-Han Choi · Watervliet, US

Key dates

• Filing date: Jul 14, 2014
• Grant date: Oct 13, 2015
• Expiry date: Jul 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

Approaches for providing a single spacer, double hardmask dual-epi FinFET are disclosed. Specifically, at least one approach for providing the FinFET includes: forming a set of spacers along each sidewall of a plurality of fins of the FinFET device; forming a first ultra-thin hardmask over the plurality of fins; implanting the first ultra-thin hardmask over a first set of fins from the plurality of fins; removing the first ultra-thin hardmask over a second set of fins from the plurality of fins untreated by the implant; forming an epitaxial (epi) layer over the second set of fins; forming a second ultra-thin hardmask over the FinFET device; implanting the second ultra-thin hardmask; removing the second ultra-thin hardmask over the first set of fins; and growing an epi layer over the first set of fins.