Patent · US Active

Nanotube structure based metal damascene process

US9159669B2 · kind B2 · utility

0Cited by

1References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ravi Keshav Joshi · Klagenfurt, AT
Juergen Steinbrenner · Zistersdorf, AT

Key dates

Filing date	Jan 30, 2014
Grant date	Oct 13, 2015
Priority date	—
Expiry date	Jan 30, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.