Semiconductor device with buried gate and method for fabricating the same
US9159732B2 · kind B2 · utility
1Cited by
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5Claims
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Key dates
| Filing date | Jul 19, 2012 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Feb 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A method for fabricating a semiconductor device includes forming landing plugs over a substrate, forming a trench by etching the substrate between the landing plugs, forming a buried gate to partially fill the trench, forming a gap-fill layer to gap-fill an upper side of the buried gate, forming protruding portions of the landing plugs, and trimming the protruding portions of the landing plugs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.