Image sensor having anti-reflective layer and fabricating method thereof
US9159754B1 · kind B1 · utility
1Cited by
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15Claims
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Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor includes a pixel layer in which an active pixel array and an optical black pixel array are formed; a first anti-reflective layer which is formed over the active pixel array, and including a hafnium oxide layer with a high transmittance; and a second anti-reflective layer which is formed over the optical black pixel array, and including a hafnium oxide layer with a low transmittance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.