Image sensor and method for fabricating the same
US9159755B2 · kind B2 · utility
4Cited by
6References
14Claims
0Family size
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Key dates
| Filing date | Dec 15, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Dec 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.