Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench

US9159797B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Gary H. Loechelt · Tempe, US
• Prasad Venkatraman · Gilbert, US

Key dates

• Filing date: Dec 13, 2013
• Grant date: Oct 13, 2015
• Expiry date: Dec 31, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/663

Abstract

An electronic device can include a substrate including an underlying doped region and a semiconductor layer overlying the substrate. A trench can have a sidewall and extend at least partly through the semiconductor layer. The electronic device can further include a first conductive structure adjacent to the underlying doped region, an insulating layer, and a second conductive structure within the trench. The insulating layer can be disposed between the first and second conductive structures, and the first conductive structure can be disposed between the insulating layer and the underlying doped region. Processes of forming the electronic device may be performed such that the first conductive structure includes a conductive fill material or a doped region within the semiconductor layer. The first conductive structure can allow the underlying doped region to be farther from the channel region and allow RDSON to be lower for a given BVDSS.