Doping a non-planar semiconductor device
US9159810B2 · kind B2 · utility
4Cited by
3References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 22, 2012 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Feb 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. A first ion implant is performed in a region of the non-planar semiconductor body. The first ion implant has a first implant energy and a first implant angle. A second ion implant is performed in the same region of the non-planar semiconductor body. The second ion implant has a second implant energy and a second implant angle. The first implant energy may be different from the second implant energy. Additionally, the first implant angle may be different from the second implant angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.