Nonvolatile memory device and fabricating method thereof
US9159844B2 · kind B2 · utility
4Cited by
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7Claims
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Key dates
| Filing date | Apr 22, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Sep 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A nonvolatile memory device comprises a substrate, a gate electrode, a single charge trapping sidewall and a source/drain region. The gate electrode is disposed on and electrically isolated from the substrate. The single charge trapping sidewall is disposed adjacent to a sidewall of the gate electrode and electrically isolated from the substrate and the gate electrode, so as to form a non-straight angle between the substrate and the single charge trapping sidewall. The source/drain region is disposed in the substrate and adjacent to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.