Phase change memory with threshold switch select device
US9159915B2 · kind B2 · utility
1Cited by
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14Claims
0Family size
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Key dates
| Filing date | Dec 18, 2013 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Dec 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8413
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.