Film forming method
US9162252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jul 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to an embodiment of the present disclosure, a method of forming a polyimide film on a substrate is disclosed. Such method can be easily controlled and form a polyimide film applicable as an insulation film. While a wafer is heated at a temperature at which a polyimide film is formed, a cycle, in which the wafer is sequentially supplied with a first processing gas, for example, containing a PMDA-based first monomer, and a second processing gas containing a non-aromatic monomer, for example, an HMDA-based second monomer, is performed for a predetermined number of times. When the processing gases are switched, a replacement gas is supplied into a reaction tube so that the monomers are not mixed together under the atmosphere in the reaction tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.