Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9164372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Dec 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30461
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.