High purity copper—manganese alloy sputtering target
US9165750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jan 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A high purity copper-manganese alloy sputtering target containing 0.05 to 20 wt % of Mn and, excluding additive elements, remainder being Cu and unavoidable impurities, wherein the target contains 0.001 to 0.06 wtppm of P and 0.005 to 5 wtppm of S, and further contains Ca and Si, and a total content of P, S, Ca, and Si is 0.01 to 20 wtppm. The incorporation of appropriate amounts of Mn as well as Ca, P, Si, and S in copper improves the machinability that is required in the stage of producing a target to facilitate the manufacture (workability) of the target, improves the smoothness of the target surface, and inhibits the generation of particles during sputtering. Thus, provided is a high purity copper-manganese alloy sputtering target which is particularly useful for improving the yield and reliability of semiconductor products that progress toward miniaturization and integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.