Method of depositing silicone dioxide films
US9165762B2 · kind B2 · utility
1Cited by
11References
7Claims
0Family size
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Key dates
| Filing date | Apr 24, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming silicon dioxide films using plasma enhanced chemical vapor deposition (PECVD) uses tetraethyl orthosilicate (TEOS), oxygen or a source of oxygen, and hydrogen as precursors. The method can be carried out at low temperatures in a range of 125 to 175° C. which is useful for manufacturing wafers with through silicon vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.