Patent · US Active

Post-deposition soft annealing

US9165788B2 · kind B2 · utility

4Cited by
24References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 5, 2013
Grant dateOct 20, 2015
Priority date
Expiry dateApr 5, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/27
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The methods and apparatus disclosed herein concern a process that may be referred to as a “soft anneal.” A soft anneal provides various benefits. Fundamentally, it reduces the internal stress in one or more silicon layers of a work piece. Typically, though not necessarily, the internal stress is a compressive stress. A particularly beneficial application of a soft anneal is in reduction of internal stress in a stack containing two or more layers of silicon. Often, the internal stress of a layer or group of layers in a stack is manifest as wafer bow. The soft anneal process can be used to reduce compressive bow in stacks containing silicon. The soft anneal process may be performed without causing the silicon in the stack to become activated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.