Method for forming insulating film
US9165818B2 · kind B2 · utility
3Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2012 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | May 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
[Problem] To provide a method capable of forming an insulating film having homogeneous and high bulk density and less suffering defects.[Means for solving] A substrate surface is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium; and then further coated with a polysilazane composition; and thereafter heated to form an insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.