On-SOI integrated circuit comprising a triac for protection against electrostatic discharges
US9165908B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 1, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Dec 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes four electronic components, a buried UTBOX layer under and plumb with the electronic components, and two pairs of oppositely doped ground planes plumb with corresponding components under the layer. A first isolation trench mutually isolates the ground planes from corresponding wells made plumb and in contact with the ground planes and exhibiting the first doping type. Bias electrodes contact respective wells and ground planes. One pair of electrodes is for connecting to a first bias voltage and the other pair is for connecting to a second bias voltage. Also included are a semiconductor substrate exhibiting the first type of doping and a deeply buried well exhibiting the second type of doping. The deeply buried well contacts the other wells and separates them from the substrate. Finally, a control electrode couples to the deeply buried well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.