Patent · US Active

Lateral transistor component and method for producing same

US9166039B2 · kind B2 · utility

6Cited by

9References

26Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Erhard Landgraf · Dresden, DE
Thomas Bertrams · Dresden, DE
Claus Dahl · Dresden, DE
Henning Feick · Dresden, DE
Andreas Pribil · Dresden, DE

Key dates

Filing date	Jul 1, 2014
Grant date	Oct 20, 2015
Priority date	—
Expiry date	Jul 1, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/663
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.