Gallium nitride containing laser device configured on a patterned substrate
US9166372B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jun 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.