Laser devices having a gallium and nitrogen containing semipolar surface orientation
US9166373B1 · kind B1 · utility
1Cited by
67References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2015 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jan 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.