Tungsten growth modulation by controlling surface composition
US9169556B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2013 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Jan 11, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.