Method of vapor-diffusing impurities
US9171722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2013 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2033 |
Classification
- Technology area (CPC —)General
Abstract
A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.