FinFET structure and method to adjust threshold voltage in a FinFET structure

US9171954B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. 2 LLC · US

Inventors

• Eduard A. Cartier · New York, US
• Brian J. Greene · Wappingers Falls, US
• Dechao Guo · Niskayuna, US
• Gan Wang · Fishkill, US
• Yanfeng Wang · Qingdao, CN
• Keith Kwong Hon Wong · Wappingers Falls, US

Key dates

• Filing date: Nov 10, 2014
• Grant date: Oct 27, 2015
• Expiry date: Nov 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.