Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
US9177780B2 · kind B2 · utility
3Cited by
2References
20Claims
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Key dates
| Filing date | Sep 19, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Sep 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to a plasma comprising ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.