Substituted silacyclopropane precursors and their use for the deposition of silicon-containing films
US9177783B2 · kind B2 · utility
1Cited by
2References
11Claims
0Family size
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Key dates
| Filing date | Dec 4, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Dec 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.