NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate
US9177787B2 · kind B2 · utility
5Cited by
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12Claims
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Key dates
| Filing date | Mar 3, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Mar 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a first temperature; and exposing the first layer to an RF plasma formed from a process gas comprising ammonia (NH3) to transform the first layer into a nitrogen-containing layer, wherein the plasma has an ion energy of less than about 8 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.