Systems and methods for forming semiconductor devices
US9177791B2 · kind B2 · utility
1Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | Dec 13, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Dec 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28264
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments provided herein describe systems and methods for forming semiconductor devices. A semiconductor substrate is provided. The semiconductor substrate is exposed to bromine radicals, hydrogen radicals, or a combination thereof. An oxide layer is formed above the semiconductor substrate. The semiconductor substrate is held within a controlled atmosphere at least from the completion of the exposing of the semiconductor substrate to bromine radicals, hydrogen radicals, or a combination thereof and the beginning of the forming of the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.