High tilt angle plus twist drain extension implant for CHC lifetime improvement
US9177802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | May 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit containing an analog MOS transistor may be formed by implanting drain extensions with exactly four sub-implants wherein at least one sub-implant implants dopants in a substrate of the integrated circuit at a source/drain gate edge of the analog MOS transistor at a twist angle having a magnitude of 5 degrees to 40 degrees with respect to the source/drain gate edge of the analog MOS transistor, for each source/drain gate edge of the analog MOS transistor, wherein a zero twist angle sub-implant is perpendicular to the source/drain gate edge. No more than two sub-implants put the dopants in the substrate at any source/drain gate edge of the analog MOS transistor. All four sub-implants are performed at a same tilt angle. No halo implants are performed on the analog MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.