Sub-lithographic semiconductor structures with non-constant pitch

US9177820B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. 2 LLC · US

Inventors

• Marc A. Bergendahl · Troy, US
• David V. Horak · South Burlington, US
• Charles W. Koburger, III · Delmar, US
• Shom Ponoth · Irvine, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Oct 24, 2012
• Grant date: Nov 3, 2015
• Expiry date: Aug 9, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3086
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Fin structures and methods of manufacturing fin structures using a dual-material sidewall image transfer mask to enable patterning of sub-lithographic features is disclosed. The method of forming a plurality of fins includes forming a first set of fins having a first pitch. The method further includes forming an adjacent fin to the first set of fins. The adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch. The first set of fins and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process.