Methods of forming metal nitride materials

US9177826B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Bernd Hintze · Rohrbach, DE
• Frank Koschinsky · Radebeul, DE

Key dates

• Filing date: Feb 2, 2012
• Grant date: Nov 3, 2015
• Expiry date: Feb 2, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76864
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed herein are various methods of forming metal nitride layers on various types of semiconductor devices. In one example, the method includes forming a layer of insulating material above a semiconducting substrate, performing a physical vapor deposition process to form a metal nitride layer above the layer of insulating material, wherein the metal nitride layer has an intrinsic as-deposited stress level, and performing at least one process operation on the metal nitride layer to reduce a magnitude of the intrinsic as-deposited stress level in the metal nitride layer.