Method of coating water soluble mask for laser scribing and plasma etch
US9177864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Sep 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.