Advanced process control method for controlling width of spacer and dummy sidewall in semiconductor device
US9177875B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Feb 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An advanced process control (APC) method for controlling a width of a spacer in a semiconductor device includes: providing a semiconductor substrate; providing a target width of a gate; forming the gate on the semiconductor substrate, in which the gate has a measured width; depositing a dielectric layer covering the gate, in which the dielectric layer has a measured thickness; providing a target width of the spacer; determining a trim time of the dielectric layer based on the target width of the gate, the measured width of the gate, the target width of the spacer, and the measured thickness of the dielectric layer; and performing a trimming process on the dielectric layer for the determined trim time to form the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.