Patent · US Active

Semiconductor component with a front side and a back side metallization layer and manufacturing method thereof

US9177893B2 · kind B2 · utility

3Cited by

3References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Anton Mauder · Kolbermoor, DE
Gerald Lackner · Arnoldstein, AT
Oliver Haeberlen · Villach, AT

Key dates

Filing date	May 17, 2011
Grant date	Nov 3, 2015
Priority date	—
Expiry date	Dec 28, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3025
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In various embodiments, a semiconductor component may include a semiconductor layer having a front side and a back side; at least one electronic element formed at least partially in the semiconductor layer; at least one via formed in the semiconductor layer and leading from the front side to the back side of the semiconductor layer; a front side metallization layer disposed over the front side of the semiconductor layer and electrically connecting the at least one electronic element to the at least one via; a cap disposed over the front side of the semiconductor layer and mechanically coupled to the semiconductor layer, the cap being configured as a front side carrier of the semiconductor component; a back side metallization layer disposed over the back side of the semiconductor layer and electrically connected to the at least one via.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.