Resistive random access memory cells having shared electrodes with transistor devices
US9178000B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 29, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Apr 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.