Integrated circuit devices including FinFETS and methods of forming the same
US9178045B2 · kind B2 · utility
7Cited by
6References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 18, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Sep 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit devices including fin field-effect transistors (finFETs) and methods of forming the same are provided. The methods may include forming a fin-shaped channel region including germanium on a substrate and forming a source/drain region adjacent the channel region on the substrate. The methods may further include forming a barrier layer contacting sidewalls of the channel region and the source/drain region, and the barrier layer may include SixGe1-x, and x may be in a range of about 0.05 to about 0.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.