Magnetoresistive element and magnetic memory

US9178137B2 · kind B2 · utility

Inventors

• Youngmin EEH · Seongnam-si, KR
• Katsuya Nishiyama · Yokohama, JP
• Daisuke Ikeno · Yokohama, JP
• Toshihiko Nagase · Sagamihara, JP
• Tadashi Kai · Yokohama, JP
• Daisuke Watanabe · Chigasaki, JP

Key dates

• Filing date: Aug 9, 2013
• Grant date: Nov 3, 2015
• Expiry date: Nov 16, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/20

Abstract

A magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer.