Doped electrodes used to inhibit oxygen loss in ReRAM device
US9178142B2 · kind B2 · utility
1Cited by
6References
16Claims
0Family size
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Key dates
| Filing date | Mar 4, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Aug 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
A nonvolatile memory device and method for forming a resistive switching memory element, with improved lifetime and switching performance. A nonvolatile memory element includes resistive switching layer formed between a first and second electrode. The resistive switching layer comprises a metal oxide. One or more electrodes include a dopant material to provide the electrode with enhanced oxygen-blocking properties that maintain and control the oxygen ion content within the memory element contributing to increased device lifetime and performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.