Establishing a thermal profile across a semiconductor chip
US9178495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Mar 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, and wherein the through-silicon via conducts heat from the thermal control circuitry to the region. In other embodiments, the method comprises forming a through-silicon via in a first semiconductor chip having thermal control circuitry. The method also comprises forming the through-silicon via in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, wherein the through-silicon via conducts heat from the thermal control circuitry to the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.