Integrated cluster to enable next generation interconnect
US9184093B2 · kind B2 · utility
0Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2014 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Feb 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.