Titanium incorporation into absorber layer for solar cell
US9184322B2 · kind B2 · utility
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1References
15Claims
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Key dates
| Filing date | Aug 29, 2013 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | May 15, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.