Patent · US Active

Laser diodes with an etched facet and surface treatment

US9184563B1 · kind B1 · utility

13Cited by
29References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 26, 2013
Grant dateNov 10, 2015
Priority date—
Expiry dateNov 30, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/17
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.