Method for forming SiOCH film using organoaminosilane annealing
US9190263B2 · kind B2 · utility
501Cited by
19References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 22, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.