Image sensor and method for fabricating the same
US9190440B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jun 10, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jun 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.