Semiconductor structure and manufacturing method of the same
US9190467B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Jan 8, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jan 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
Abstract
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a stacked strip structure, and a tensile material strip. The stacked strip structure is formed vertically on the substrate, the stacked strip structure having compressive stress. The stacked strip structure comprises a plurality of conductive strips and a plurality of insulating strips, and the conductive strips and the insulating strips are interlaced. The tensile material strip is formed on the stacked strip structure, the tensile material strip having tensile stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.