Patent · US Active

Technique for forming a FinFET device using selective ion implantation

US9190498B2 · kind B2 · utility

9Cited by

1References

7Claims

0Family size

Assignee

Varian Semiconductor Equipment Associates, Inc. · US

Inventors

Adam Brand · Palo Alto, US
Srinivas D. Nemani · Sunnyvale, US
John Hautala · Beverly, US
Ludovic Godet · Sunnyvale, US
Yuri Erokhin · Newburyport, US

Key dates

Filing date	Sep 13, 2013
Grant date	Nov 17, 2015
Priority date	—
Expiry date	Dec 4, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31155
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A three-dimensional structure disposed on a substrate is processed so as to alter the etch rate of material disposed on at least one surface of the structure. In some embodiments, a conformal deposition of material is performed on the three-dimensional structure. Subsequently, an ion implant is performed on at least one surface of the three-dimensional structure. This ion implant serves to alter the etch rate of the material deposited on that structure. In some embodiments, the ion implant increases the etch rate of the material. In other embodiments, the ion implant decreases the etch rate. In some embodiments, ion implants are performed on more than one surface, such that the material on at least one surface is etched more quickly and material on at least one other surface is etched more slowly.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.