Germanium antimony telluride materials and devices incorporating same
US9190609B2 · kind B2 · utility
6Cited by
89References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 21, 2011 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | May 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.