Semiconductor device and method
US9196477B2 · kind B2 · utility
0Cited by
0References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2012 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Apr 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacturing the device is disclosed. In one aspect, a method includes providing a substrate, providing a first epitaxial semiconducting layer on top of the substrate, and forming a one- or two-dimensional repetitive pattern, each part of the pattern having an aspect ratio in the range of about 0.1 to 50.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.