Ion control for a plasma source
US9198274B2 · kind B2 · utility
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1References
14Claims
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Assignee
Inventor
Key dates
| Filing date | Jul 1, 2013 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Jul 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
One embodiment is directed to a plasma source comprising a cavity and at least first and second electrodes. The plasma source is configured to, during a first portion of each cycle, bias the first electrode as a cathode and use the second electrode as an anode, during a second portion of each cycle, apply an ion flush bias to the first and second electrodes, during a third portion of each cycle, bias the second electrode as a cathode and use the first electrode as an anode, and during a fourth portion of each cycle, apply an ion flush bias to the first and second electrodes. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.