Electronic device for radiofrequency or power applications and process for manufacturing such a device
US9198294B2 · kind B2 · utility
1Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2011 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Apr 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to an electronic device for radiofrequency or power applications, comprising a semiconductor layer supporting electronic components on a support substrate, wherein the support substrate comprises a base layer having a thermal conductivity of at least 30 W/mK and a superficial layer having a thickness of at least 5 μm, the superficial layer having an electrical resistivity of at least 3000 Ohm·cm and a thermal conductivity of at least 30 W/mK. The invention also relates to two processes for manufacturing such a device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.